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Home > Products > Transistors > FETs, MOSFETs > ///IPD80R3K3P7ATMA1

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Part No IPD80R3K3P7ATMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 800V 1.9A TO252-3
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id3.5V @ 30µA
Vgs(th)(Max)@Id±20V
Vgs5.8 nC @ 10 V
FETFeature18W (Tc)
DraintoSourceVoltage(Vdss)800 V
OperatingTemperature-
DriveVoltage(MaxRdsOn10V
ProductStatusActive
Package/CasePG-TO252-3
GateCharge(Qg)(Max)@VgsTO-252-3, DPak (2 Leads + Tab), SC-63
Grade
MountingType-
InputCapacitance(Ciss)(Max)@Vds-
SeriesCoolMOS™ P7
Qualification
SupplierDevicePackageSurface Mount
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C1.9A (Tc)
Vgs(Max)120 pF @ 500 V
MinRdsOn)3.3Ohm @ 590mA, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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