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Home > Products > Transistors > FETs, MOSFETs > ///IPD80R1K4P7ATMA1

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IPD80R1K4P7ATMA1Quantity:13007

Part No IPD80R1K4P7ATMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 800V 4A TO252
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id3.5V @ 700µA
Vgs(th)(Max)@Id±20V
Vgs10 nC @ 10 V
FETFeature32W (Tc)
DraintoSourceVoltage(Vdss)800 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypePG-TO252-2
InputCapacitance(Ciss)(Max)@Vds-
SeriesCoolMOS™
Qualification
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C4A (Tc)
Vgs(Max)250 pF @ 500 V
MinRdsOn)1.4Ohm @ 1.4A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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