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IPD80N04S306ATMA1Quantity:9566

Part No IPD80N04S306ATMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 40V 90A TO252-3
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

RdsOn(Max)@Id4V @ 52µA
Vgs(th)(Max)@Id±20V
Vgs47 nC @ 10 V
FETFeature100W (Tc)
DraintoSourceVoltage(Vdss)40 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn10V
ProductStatusNot For New Designs
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypePG-TO252-3-11
InputCapacitance(Ciss)(Max)@Vds-
SeriesOptiMOS™
Qualification
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C90A (Tc)
Vgs(Max)3250 pF @ 25 V
MinRdsOn)5.2mOhm @ 80A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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