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Home > Products > Transistors > FETs, MOSFETs > ///IPD80R2K8CEATMA1

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IPD80R2K8CEATMA1Quantity:10977

Part No IPD80R2K8CEATMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 800V 1.9A TO252-3
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id3.9V @ 120µA
Vgs(th)(Max)@Id±20V
Vgs12 nC @ 10 V
FETFeature42W (Tc)
DraintoSourceVoltage(Vdss)800 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypePG-TO252-3
InputCapacitance(Ciss)(Max)@Vds-
SeriesCoolMOS™ CE
Qualification
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C1.9A (Tc)
Vgs(Max)290 pF @ 100 V
MinRdsOn)2.8Ohm @ 1.1A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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