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Home > Products > Transistors > FETs, MOSFETs > ///IPD80N06S3-09

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IPD80N06S3-09Quantity:12799

Part No IPD80N06S3-09
Manufacturer Infineon Technologies
Description MOSFET N-CH 55V 80A TO252-3
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id4V @ 55µA
Vgs(th)(Max)@Id±20V
Vgs88 nC @ 10 V
FETFeature107W (Tc)
DraintoSourceVoltage(Vdss)55 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn10V
ProductStatusObsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingTypePG-TO252-3-11
InputCapacitance(Ciss)(Max)@Vds-
SeriesOptiMOS™
Qualification
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C80A (Tc)
Vgs(Max)6100 pF @ 25 V
MinRdsOn)8.4mOhm @ 40A, 10V
PackageTape & Reel (TR)
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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