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Home > Products > Transistors > FETs, MOSFETs > ///TW015Z120C,S1F

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TW015Z120C,S1FQuantity:10661

Part No TW015Z120C,S1F
Manufacturer Toshiba Semiconductor and Storage
Description G3 1200V SIC-MOSFET TO-247-4L 1
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id5V @ 11.7mA
Vgs(th)(Max)@Id6000 pF @ 800 V
Vgs158 nC @ 18 V
FETFeature175°C
DraintoSourceVoltage(Vdss)1200 V
OperatingTemperature-
DriveVoltage(MaxRdsOn18V
ProductStatusActive
Package/CaseTO-247-4
GateCharge(Qg)(Max)@Vgs+25V, -10V
Grade
MountingTypeThrough Hole
InputCapacitance(Ciss)(Max)@Vds431W (Tc)
Series-
Qualification
SupplierDevicePackageTO-247-4L(X)
FETTypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Current-ContinuousDrain(Id)@25°C100A (Tc)
Vgs(Max)-
MinRdsOn)21mOhm @ 50A, 18V
PackageTube
PowerDissipation(Max)-

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