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Home > Products > Transistors > FETs, MOSFETs > ///TW015N120C,S1F

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TW015N120C,S1FQuantity:2780

Part No TW015N120C,S1F
Manufacturer Toshiba Semiconductor and Storage
Description G3 1200V SIC-MOSFET TO-247 15MO
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id5V @ 11.7mA
Vgs(th)(Max)@Id+25V, -10V
Vgs158 nC @ 18 V
FETFeature431W (Tc)
DraintoSourceVoltage(Vdss)1200 V
OperatingTemperatureThrough Hole
DriveVoltage(MaxRdsOn18V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeTO-247
InputCapacitance(Ciss)(Max)@Vds-
Series-
Qualification
SupplierDevicePackageTO-247-3
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
Current-ContinuousDrain(Id)@25°C100A (Tc)
Vgs(Max)6000 pF @ 800 V
MinRdsOn)20mOhm @ 50A, 18V
PackageTube
PowerDissipation(Max)175°C

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