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See Product Specifications for product details.
Buy TW015N120C,S1F with confidence from acme-chip.com, 1 Year Warranty
See Product Specifications for product details.
Buy TW015N120C,S1F with confidence from acme-chip.com, 1 Year Warranty
TW015N120C,S1FQuantity:2780
Part No | TW015N120C,S1F |
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Manufacturer | Toshiba Semiconductor and Storage |
Description | G3 1200V SIC-MOSFET TO-247 15MO |
Lead Free Status / RoHS Status | Contains lead / RoHS compliant |
Datasheets |
Specifications
RdsOn(Max)@Id | 5V @ 11.7mA |
---|---|
Vgs(th)(Max)@Id | +25V, -10V |
Vgs | 158 nC @ 18 V |
FETFeature | 431W (Tc) |
DraintoSourceVoltage(Vdss) | 1200 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 18V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-247 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | TO-247-3 |
FETType | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Current-ContinuousDrain(Id)@25°C | 100A (Tc) |
Vgs(Max) | 6000 pF @ 800 V |
MinRdsOn) | 20mOhm @ 50A, 18V |
Package | Tube |
PowerDissipation(Max) | 175°C |
Introduce
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