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Home > Products > Transistors > FETs, MOSFETs > ///SIE812DF-T1-GE3

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SIE812DF-T1-GE3Quantity:4169

Part No SIE812DF-T1-GE3
Manufacturer Vishay Siliconix
Description MOSFET N-CH 40V 60A 10POLARPAK
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id3V @ 250µA
Vgs(th)(Max)@Id±20V
Vgs170 nC @ 10 V
FETFeature5.2W (Ta), 125W (Tc)
DraintoSourceVoltage(Vdss)40 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusLast Time Buy
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingType10-PolarPAK® (L)
InputCapacitance(Ciss)(Max)@Vds-
SeriesTrenchFET®
Qualification
SupplierDevicePackage10-PolarPAK® (L)
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C60A (Tc)
Vgs(Max)8300 pF @ 20 V
MinRdsOn)2.6mOhm @ 25A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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