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Buy SIE808DF-T1-GE3 with confidence from acme-chip.com, 1 Year Warranty
See Product Specifications for product details.
Buy SIE808DF-T1-GE3 with confidence from acme-chip.com, 1 Year Warranty
SIE808DF-T1-GE3Quantity:3440
Part No | SIE808DF-T1-GE3 |
---|---|
Manufacturer | Vishay Siliconix |
Description | MOSFET N-CH 20V 60A 10POLARPAK |
Lead Free Status / RoHS Status | Contains lead / RoHS compliant |
Datasheets |
Specifications
RdsOn(Max)@Id | 3V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 155 nC @ 10 V |
FETFeature | 5.2W (Ta), 125W (Tc) |
DraintoSourceVoltage(Vdss) | 20 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 4.5V, 10V |
ProductStatus | Last Time Buy |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | 10-PolarPAK® (L) |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | TrenchFET® |
Qualification | |
SupplierDevicePackage | 10-PolarPAK® (L) |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 60A (Tc) |
Vgs(Max) | 8800 pF @ 10 V |
MinRdsOn) | 1.6mOhm @ 25A, 10V |
Package | Tape & Reel (TR) |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Introduce
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