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SIR646DP-T1-GE3Quantity:5619

Part No SIR646DP-T1-GE3
Manufacturer Vishay
Description MOSFET N-CH 40V 60A PPAK 8SO
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Drain to Source Voltage (Vdss):40V
Power Dissipation (Max):5W (Ta), 54W (Tc)
Package / Case:PowerPAK® SO-8
Mounting Type:Surface Mount
Packaging:Cut Tape (CT)
Supplier Device Package:PowerPAK® SO-8
Vgs(th) (Max) @ Id:2.2V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 40V 60A (Tc) 5W (Ta), 54W (Tc) Surface Mount PowerPAK® SO-8
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:[email protected]
FET Type:N-Channel
Series:TrenchFET®
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Other Names:SIR646DP-T1-GE3CT
Input Capacitance (Ciss) (Max) @ Vds:2230pF @ 20V
Vgs (Max):±20V
Rds On (Max) @ Id, Vgs:3.8 mOhm @ 20A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:51nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)

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We can supply SIR646DP-T1-GE3 , send us a request quote to request SIR646DP-T1-GE3 pirce and lead time. acme-chip.com a professional electronic components distributor. With 10+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIR646DP-T1-GE3.The price and lead time for SIR646DP-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part SIR646DP-T1-GE3.We look forward to working with you to establish long-term relations of cooperation