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GP1M003A090CQuantity:6092

Part No GP1M003A090C
Manufacturer Global Power Technologies Group
Description MOSFET N-CH 900V 2.5A DPAK
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Drain to Source Voltage (Vdss):900V
Power Dissipation (Max):94W (Tc)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type:Surface Mount
Packaging:Cut Tape (CT)
Supplier Device Package:D-Pak
Vgs(th) (Max) @ Id:4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 900V 2.5A (Tc) 94W (Tc) Surface Mount D-Pak
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:[email protected]
FET Type:N-Channel
Series:-
Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
Other Names:1560-1157-1
Input Capacitance (Ciss) (Max) @ Vds:748pF @ 25V
Vgs (Max):±30V
Rds On (Max) @ Id, Vgs:5.1 Ohm @ 1.25A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:17nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)

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