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Home > Products > Transistors > FETs, MOSFETs > ///G080N10M

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G080N10MQuantity:13160

Part No G080N10M
Manufacturer Goford Semiconductor
Description MOSFET N-CH 100V 180A TO-263
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id2.5V @ 250µA
Vgs(th)(Max)@Id±20V
Vgs107 nC @ 4.5 V
FETFeature370W (Tc)
DraintoSourceVoltage(Vdss)100 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeTO-263
InputCapacitance(Ciss)(Max)@Vds-
Series-
Qualification
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C180A (Tc)
Vgs(Max)13950 pF @ 50 V
MinRdsOn)7.5mOhm @ 30A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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