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Home > Products > Transistors > FETs, MOSFETs > ///FDB86102LZ

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FDB86102LZQuantity:19494

Part No FDB86102LZ
Manufacturer Fairchild Semiconductor
Description POWER FIELD-EFFECT TRANSISTOR, 8
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id±20V
Vgs(th)(Max)@Id3.1W (Ta)
Vgs-
FETFeatureTO-263 (D2PAK)
DraintoSourceVoltage(Vdss)100 V
OperatingTemperature24mOhm @ 8.3A, 10V
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingType21 nC @ 10 V
InputCapacitance(Ciss)(Max)@VdsSurface Mount
SeriesPowerTrench®
Qualification
SupplierDevicePackage1275 pF @ 50 V
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C8.3A (Ta), 30A (Tc)
Vgs(Max)-55°C ~ 150°C (TJ)
MinRdsOn)3V @ 250µA
PackageBulk
PowerDissipation(Max)TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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