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Home > Products > Transistors > IGBTs > ///DF200R12W1H3B27BOMA1

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DF200R12W1H3B27BOMA1Quantity:7836

Part No DF200R12W1H3B27BOMA1
Manufacturer Infineon Technologies
Description IGBT MOD 1200V 30A 375W
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Configuration2 Independent
Voltage-CollectorEmitterBreakdown(Max)1200 V
OperatingTemperatureChassis Mount
ProductStatusActive
Package/CaseModule
NTCThermistor-40°C ~ 150°C
MountingTypeModule
Current-CollectorCutoff(Max)2 nF @ 25 V
Series-
InputYes
SupplierDevicePackage
InputCapacitance(Cies)@VceStandard
Vce(on)(Max)@Vge1.3V @ 15V, 30A
Current-Collector(Ic)(Max)30 A
Ic1 mA
PackageTray
Power-Max375 W
IGBTType-

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