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Home > Products > Transistors > FETs, MOSFETs > ///AS1M025120T

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AS1M025120TQuantity:19176

Part No AS1M025120T
Manufacturer ANBON SEMICONDUCTOR (INT'L) LIMITED
Description N-CHANNEL SILICON CARBIDE POWER
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id4V @ 15mA
Vgs(th)(Max)@Id+25V, -10V
Vgs195 nC @ 20 V
FETFeature370W (Tc)
DraintoSourceVoltage(Vdss)1200 V
OperatingTemperatureThrough Hole
DriveVoltage(MaxRdsOn20V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeTO-247-4
InputCapacitance(Ciss)(Max)@Vds-
Series-
Qualification
SupplierDevicePackageTO-247-4
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
Current-ContinuousDrain(Id)@25°C65A (Tc)
Vgs(Max)4200 pF @ 1000 V
MinRdsOn)34mOhm @ 50A, 20V
PackageTube
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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