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SI5473DC-T1-GE3Quantity:7874

Part No SI5473DC-T1-GE3
Manufacturer Vishay
Description MOSFET P-CH 12V 5.9A 1206-8
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Drain to Source Voltage (Vdss):12V
Power Dissipation (Max):1.3W (Ta)
Package / Case:8-SMD, Flat Lead
Mounting Type:Surface Mount
Packaging:Tape & Reel (TR)
Supplier Device Package:1206-8 ChipFET™
Vgs(th) (Max) @ Id:1V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:P-Channel 12V 5.9A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:[email protected]
FET Type:P-Channel
Series:TrenchFET®
Current - Continuous Drain (Id) @ 25°C:5.9A (Ta)
Vgs (Max):±8V
Rds On (Max) @ Id, Vgs:27 mOhm @ 5.9A, 4.5V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:32nC @ 4.5V
Operating Temperature:-55°C ~ 150°C (TJ)

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