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Home > Products > Transistors > Bipolar (BJT) > ///RN1132MFV,L3F

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RN1132MFV,L3FQuantity:4902

Part No RN1132MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 50V 0.1A VESM
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Voltage-CollectorEmitterBreakdown(Max)50 V
VceSaturation(Max)@Ib100nA (ICBO)
ProductStatusActive
Package/CaseSurface Mount
TransistorTypeNPN - Pre-Biased
Grade
MountingType-
Current-CollectorCutoff(Max)150 mW
Series-
DCCurrentGain(hFE)(Min)@Ic120 @ 1mA, 5V
Frequency-TransitionVESM
Qualification
SupplierDevicePackageSOT-723
Vce300mV @ 500µA, 5mA
Current-Collector(Ic)(Max)100 mA
Ic-
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Resistor-Base(R1)200 kOhms
Power-Max-
Resistor-EmitterBase(R2)-

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